We model the influence of scattering along the channel and extension regionsof dual gate nanotransistor. It is found that the reduction in drain currentdue to scattering in the right half of the channel is comparable to thereduction in drain current due to scattering in the left half of the channel,when the channel length is comparable to the scattering length. This is incontrast to a popular belief that scattering in the source end of ananotransistor is significantly more detrimental to the drive current thanscattering elsewhere. As the channel length becomes much larger than thescattering length, scattering in the drain-end is less detrimental to the drivecurrent than scattering near the source-end of the channel. Finally, we showthat for nanotransistors, the classical picture of modeling the extensionregions as simple series resistances is not valid.
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